copyright@ powergate semiconductor usa. all rights reserved. pfp4n60/PFF4N60 features high ruggedness r ds( on ) (max 2.3 ? )@v gs =10v gate charge ( typ. 27 nc) improved dv/dt capability 100% avalanche tested general description these n - channel enhancement mode field effect power transistor is using powergate semiconductors advanced planar stripe, dmos technology intended for off line switch mode power supply. also, especially designed to minimize r ds( on ) and high rugged avalanche characteristics. these devices are well suited for high efficiency switching mode power supplies and active power factor correction. n - channel mosfet absolute maximum ratings symbol parameter value unit pfp4n60 PFF4N60 v dss drain to source voltage 600 v i d continuous drain current (@t c =25 o c) 4.5 4.5* a continuous drain current (@t c =100 o c) 2.6 2.6* a i dm drain current pulsed (note 1) 16 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 262 mj e ar repetitive avalanche energy (note 1) 3.9 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d total power dissipation (@t c =25 o c) 98 33* w derating factor above 25 o c 0.78 0.31 w/ o c t stg , t j operating junction temperature & storage temperature - 55 ~ + 150 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 o c thermal characteristics symbol parameter value unit pfp4n60 PFF4N60 r thjc thermal resistance, junction to case 1.28 3.8 o c/w r thcs thermal resistance, case to sink 0.5 o c/w r thja thermal resistance, junction to ambient 62.5 o c/w 1/8 *. drain current limited by maximum junction temperature. bv dss : 600v i d : 4.5a r ds(on) : 2.3ohm 1 2 3 1 2 3 1. gate 2. drain 3. source PFF4N60 1 2 3 pfp4n60
copyright@ powergate semiconductor usa. all rights reserved. electrical characteristic ( t c = 25 o c unless otherwise specified ) symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua 600 - - v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c - 0.68 - v/ o c i dss drain to source leakage current v ds =600v, v gs =0v - - 50 ua v ds =480v, t c =125 o c - - 100 ua i gss gate to source leakage current, forward v gs =30v, v ds =0v - - 100 na v gs = - 30v, v ds =0v - - - 100 na gate to source leakage current, reverse on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =250ua 3.0 - 5.0 v r ds(on) drain to source on state resistance v gs =10v, i d = 2.0a 2.05 2.3 ? dynamic characteristics c iss input capacitance v gs =0v, v ds =25v, f=1mhz 570 740 pf c oss output capacitance 64 83 c rss reverse transfer capacitance 14 18 t d(on) turn on delay time v ds =300v, i d =4.5a, r g =25? 25 32 ns tr rising time 54 70 t d(off) turn off delay time 120 157 t f fall time 34 45 q g total gate charge v ds =480v, v gs =10v, i d =4.5a 27 30 nc q gs gate - source charge 2.8 - q gd gate - drain charge 8.7 - source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit i s continuous source current integral reverse p - n junction diode in the mosfet - - 4.5 a i sm pulsed source current - - 16 a v sd diode forward voltage drop. i s =4.5a, v gs =0v - - 1.4 v t rr reverse recovery time i s =4.5a, v gs =0v, di f / dt =100a/us - 560 - ns q rr breakdown voltage temperature - 1.8 - uc . notes 1. repetitive rating : pulse width limited by junction temperature. 2. l = 26mh, i as = 4.5a, v dd = 50v, r g =50?, starting t j = 25 o c 3. i sd 4.0a, di/dt = 300a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature. 2/8 pfp4n60/PFF4N60
copyright@ powergate semiconductor usa. all rights reserved. fig. 1. on - state characteristics fig. 2. transfer characteristics fig. 3. on - resistance variation vs. drain current and gate voltage fig. 5. capacitance characteristics (non - repetitive) fig. 6. gate charge characteristics fig. 4. on state current vs. diode forward voltage 3/8 pfp4n60/PFF4N60 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 ? ? n o t e s : 1 . 2 5 0 ? s p u l s e t e s t 2. t c = 2 5 ? ? v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v i d , drain current [a] v ds , drain-source voltage [v] 2 3 4 5 6 7 8 9 10 10 -1 10 0 10 1 150 o c 25 o c -55 o c * notes : 1. v ds = 50v 2. id=250ua pulse test i d , drain current [a] v gs , gate-source voltage [v] 0 2 4 6 8 10 12 0 1 2 3 4 5 6 v gs = 20v v gs = 10v ? ? n o t e : t j = 2 5 ? ? r ds(on) , drain-source on-resistance [ohm] i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 -1 10 0 10 1 1 5 0 ? ? ? ? n o t e s : 1. v gs = 0v 2 . 2 5 0 ? s p u l s e t e s t 2 5 ? ? i dr , reverse drain current [a] v sd , source-drain voltage [v] 5 10 15 20 25 30 1 2 3 4 5 6 7 8 9 10 11 12 120v 300v 480v capacitance [pf] vds, drain-source voltage [v] *. note : i d = 4.5a 5 10 15 20 25 30 35 40 1 10 100 1000 10000 ciss = cgs + cgd (cds=shorted) coss = cds + cgd crss = cgd capacitance [pf] vds, drain-source voltage [v] * notes 1. v gs =0v 2. f=1mhz
copyright@ powergate semiconductor usa. all rights reserved. fig. 9. maximum drain current vs. case temperature. fig. 8. on resistance variation vs. junction temperature fig. 10. maximum safe operating area (tfp4n60) fig. 11. transient thermal response curve 4/8 fig 7. breakdown voltage variation vs. junction temperature pfp4n60/PFF4N60 fig. 12. maximum safe operating area(tff4n60) -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ? ? n o t e s : 1. v gs = 0 v 2. i d = 2 5 0 ? a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 ? ? n o t e s : 1. z jc ( t ) = 1 . 2 5 ? ? / w m a x . 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square wave pulse duration [sec] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10v 2. i d = 2.25a t j , junction temperature [ o c] r ds(on) , (normalized) drain-source on-resistance 25 50 75 100 125 150 0 1 2 3 4 5 i d , drain current [a] t c , case temperature [ o c] 10 -1 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 *. notes 1. t c =25 o c 2. t j =150 o c 3. single pulse operation in this area is limited by r ds(on) i d , drain current [a] v ds , drain-source voltage [v] 100us 1ms 10ms dc 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 i d , drain current [a] 100us 1ms 10ms dc operation in this area is limited by r ds(on) t j , junction temperature [ o c] *. notes 1. t c =25 o c 2. t j =150 o c 3. single pulse
copyright@ powergate semiconductor usa. all rights reserved. v ds same type as dut dut v gs 1ma q g q gs q gd v gs charge v dd dut v ds r l r g 10v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f v dd dut v ds l r g 10v in i as t p time i d(t) bv dss i as v ds(t) eas = l x i as 2 x bv dss - v dd bv dss 2 1 fig. 12. gate charge test circuit & waveform fig. 13. switching time test circuit & waveform fig. 14. unclamped inductive switching test circuit & waveform 5/8 pfp4n60/PFF4N60
copyright@ powergate semiconductor usa. all rights reserved. fig. 15. peak diode recovery dv/dt test circuit & waveform v dd same type as dut v ds l r g 10v gs i s + - v ds dut *. dv/dt controlled by rg *. is controlled by pulse period v gs (driver) i s (dut) v ds (dut) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd 6/8 pfp4n60/PFF4N60
copyright@ powergate semiconductor usa. all rights reserved. 7/8 to - 220 package dimension dim inches millimeters min max min max a 0.14 0.19 3.56 4.83 a1 0.02 0.055 0.51 1.4 a2 0.08 0.115 2.03 2.92 b 0.015 0.04 0.38 1.02 b2 0.045 0.07 1.14 1.78 c 0.014 0.024 0.36 0.61 d 0.56 0.65 14.22 16.51 e 0.096 0.104 2.44 2.64 e 0.38 0.42 9.65 10.67 h1 0.23 0.27 5.84 6.86 l 0.5 0.58 12.7 14.73 l1 - 0.25 - 6.35 p 0.139 0.161 3.53 4.09 q 0.1 0.135 2.54 3.43 pfp4n60/PFF4N60
copyright@ powergate semiconductor usa. all rights reserved. 8/8 to - 220f package dimension pfp4n60/PFF4N60 j i h g e a c f d b l k n m ? j i h g e a c f d b l k n m ? j l 3.15 4.55 3.35 15.4 3.04 13.28 7.95 6.10 max 3.10 4.50 3.25 15.2 3.02 13.08 7.90 6.05 typ. 3.05 4.45 3.15 15.0 3.00 12.88 7.85 6.00 min mm h g f e d c b a dimension 3.15 4.55 3.35 15.4 3.04 13.28 7.95 6.10 max 3.10 4.50 3.25 15.2 3.02 13.08 7.90 6.05 typ. 3.05 4.45 3.15 15.0 3.00 12.88 7.85 6.00 min mm h g f e d c b a dimension 3.00 4.62 2.10 1.67 10.05 1.255 0.605 max 2.95 4.60 2.05 1.66 10.00 1.250 0.595 typ. 2.90 4.58 2.00 1.65 9.95 1.245 0.585 min mm ? n m l k j i dimension 3.00 4.62 2.10 1.67 10.05 1.255 0.605 max 2.95 4.60 2.05 1.66 10.00 1.250 0.595 typ. 2.90 4.58 2.00 1.65 9.95 1.245 0.585 min mm ? n m l k j i dimension
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